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810nm IR High Power LED 1-3W Epileds Chip
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810nm IR High Power LED 1-3W Epileds Chip

Item Name:810nm IR high power LED 1-3W Epileds Chip
Model Number: GP-3WIR-G42-810
Input Specs:1.6-2.0VDC 700mA
Power: 1-3Watt
LED package type:K1 Power LED
Color: 810-820nm IR
Shipment: Air/DHL/Fedex/TNT
Chips:Taiwan Epileds

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  • Description

    Guangmai Technology is professional in making the 810nm IR high power LED 1-3W Epileds Chip.

    Electrical Performance

    The diameter of 3mm, 5mm is a low-power infrared emitting tube. And 8mm, 10mm are medium power and high power transmitting tubes. The forward voltage of low-power transmitter tube: 1.1-1.5V, current 20mA. The forward voltage of the medium power transmitting tube: 1.4-1.65V, current 50-100mA. High-power transmitter tube forward voltage: 1.5-1.9V, current 200-350mA. GMKJ LED makes 1-10W high-power infrared emitting tube which can be used in infrared monitoring lighting.


    Directional characteristics

    The emission intensity of infrared light-emitting diodes varies with the emission direction. When the direction angle is zero degrees, the radiation intensity is defined as 100%. When the direction angle is larger, the radiation intensity is relatively reduced. If the radiation intensity is half of the direction angle from the optical axis, its value is half of the peak value. This angle is called the direction half-value angle. The smaller the angle, the more sensitive the directivity of the component. Generally, infrared light-emitting diodes are equipped with lenses to make their directivity more sensitive


    Distance characteristics

    The radiation intensity of infrared light emitting diodes varies according to the distance on the optical axis, and also varies with different light-receiving elements. The change in the amount of incident light of the light-receiving element and the distance from the infrared light-emitting tube show certain characteristics. Basically, the light measurement is inversely proportional to the square of the distance, and is related to the different characteristics of the light-receiving element.


    When the infrared is emitted to control the corresponding controlled device, the distance controlled by it is proportional to the emission power. In order to increase the control distance of infrared light, infrared light-emitting diodes work in a pulsed state, because the effective transmission distance of pulsating light (modulated light) is proportional to the peak current of the pulse, and the emission distance of infrared light can be increased by increasing the peak value Ip as much as possible. The way to increase Ip is to reduce the pulse duty cycle, that is, to compress the pulse width T. Generally, its operating frequency is below 300KHz.


    Receiving method

    There are two ways to transmit and receive infrared rays, one is the direct type, and the other is the reflection type. Direct type means that the luminous tube and the receiving tube are relatively placed at the two ends of the transmitter and the controlled object, with a certain distance between the middle; the reflective type means that the luminous tube and the receiving tube are arranged side by side, usually the receiving tube is always without light, only in the infrared emitted by the luminous tube When the light meets the reflector, the receiving tube will only work after receiving the reflected infrared light.

    LED COLOR PICTURE (1)




    infrared power led


    High Power IR LED Chip 1W 3W infrared package size:

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    810nm IR high power LED 1-3W Epileds Chip application



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    Datasheet:

    For more details, please feel free to contact with Guangmai Tech directly.

    You can download the English Version datasheet of 810nm IR high power LED 1-3W Epileds Chip from the head of this page.


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