Five commonly used high-power LED crystals chip fabrication methods
As a lighting source, high-power LEDs have the advantages of small size, low power consumption, low heat generation, long life, fast response speed, safe low voltage, good weather resistance, and good directionality. The outer cover can be made of PC tube, which can withstand high temperature up to 135 degrees and low temperature -45 degrees. As the fourth-generation electric light source, high-power LED is known as "green lighting source". It has excellent characteristics such as small size, safe and low voltage, long life, high electro-optical conversion efficiency, fast response speed, energy saving, and environmental protection. It will definitely replace the traditional Incandescent lamps, halogen tungsten lamps and fluorescent lamps have become a new generation of light sources in the 21st century.
The manufacturing methods of high-power LED chips are summarized as follows:
①Increase the size of the glow
A single LED light-emitting area and effectively increase the amount of current flowing through the uniform distribution layer TCL to achieve the desired magnetic flux. However, simply increasing the light-emitting area does not solve this problem, and the heat dissipation problem cannot achieve the expected effect and magnetic flux in practical applications.
②Silicon backplane flip-chip method
Eutectic solder First, prepare a large LED panel light chip, and prepare a suitable size, on silicon substrate and silicon substrate, use gold eutectic solder layer and conductive layer conductor (ultrasonic gold wire ball and socket joint) , and using the mobile device's LED chips and large-sized silicon substrates that are soldered together with eutectic solder. Such a structure is more reasonable, not only to consider this issue, but also to consider the issue of light and heat, which is the mainstream high-power LED production.
③Flip-chip method of ceramic plate
The crystal structure of the LED panel light chip of the general device is the next big one, the eutectic solder layer and the conductive layer on the ceramic plate and the ceramic substrate, the corresponding leads produced in the area, the welding electrodes are used in the crystal LED Welding equipment for the welding of chips and large ceramic sheets. Such a structure is a problem that needs to be considered, and it is also a problem that needs to be considered. The use of high thermal conductivity ceramic plates and ceramic plates for light and heat has a very good heat dissipation effect and a relatively low price. It is more suitable for the current basic packaging materials and space reserved for Integration of integrated circuits in the future.
④Sapphire substrate transition method
The manufacturer of the PN junction after the removal of the sapphire substrate, grows an InGaN chip on the sapphire substrate, and then connects the traditional quaternary material to the lower electrode of the blue LED chip with a large structure by conventional methods.
⑤ AlGaInN silicon carbide (SiC) backside light method
Cree is the world's only AlGaInN ultra-bright LED manufacturer with silicon carbide substrates. The architecture of the AlGaInN/SICA chips produced over the years has been continuously improved and increased in brightness. Since the P-type and N-type electrodes are located on the top and bottom of the chip, respectively, using a single wire bond, better compatibility, ease of use, and thus become another mainstream product in the development of AlGaInNLED.
