Infrared detectors play a key role in military reconnaissance, remote sensing, communications, precision guidance, aerospace and other fields, and have received long-term attention from countries around the world, with important research value and application prospects. The integration of micro-nano structure and traditional semiconductor detector can effectively improve the photon coupling efficiency and equivalent optical path, break through the absorption limit of traditional bulk materials, improve the quantum efficiency of optoelectronic devices and reduce the dark current of the device, which is a promising candidate for high-performance infrared detectors. Research provides new technical means. The introduction of high-efficiency optical coupling and sub-wavelength optical field local effects using micro-nano structures, combined with energy level optimization of traditional semiconductor devices and other control methods to improve the overall performance of detectors, has become an active and promising field of infrared detectors. research direction.
According to Memes Consulting, recently, researcher Shi Haofei's research group from the Micro-Nano Manufacturing and System Integration Center of Chongqing Institute of Green Intelligent Technology, Chinese Academy of Sciences published a "Micro-Nano Structure Enhanced Infrared Detector" in the journal "Infrared and Laser Engineering". A review article on the topic of "Research Progress". Researcher Shi Haofei is mainly engaged in the research of graphene material preparation, micro-nano processing technology, infrared detection devices and so on.
This study summarizes the research on various types of micro-nanostructure-enhanced infrared detectors in recent years. Firstly, the basic principle of the enhanced infrared detector with micro-nano structure is introduced, and the classification and comparison are made according to the different materials and functions of the micro-nano structure. The research progress of micro-nano structure in infrared detectors is expounded; finally, the development trend of enhanced infrared detectors based on micro-nano structure is summarized and prospected.
Silicon-Based Infrared Detector with Microhole Array Structure
In the field of infrared detectors, the micro-nano structure is used to improve the coupling efficiency and absorption rate of photons, and while maintaining the optical response of the device, the thickness and volume of the absorption layer of the device are reduced, thereby reducing the dark current of the device and improving the detection rate of the device. At present, the micro-nano structures used in the research of infrared detectors mainly include: medium-type micro-nano structures, surface metal-type micro-nano structures, and three-dimensional plasmonic cavity-type micro-nano structures. This is the enhancement of the performance of infrared detectors by the microstructure, which is first reflected in the antireflection effect on a specific incident spectrum or a broad spectrum band. The substantial increase in the light absorption rate of the detector means that thinner absorption layer materials can be used, and the micro-nano structure itself can effectively reduce the volume of the photosensitive unit of the device, which makes the intrinsic dark current of the device related to the material volume significantly reduced. , so as to further improve the detection rate and comprehensive performance of infrared detectors.
The use of micro-nano structures to achieve multi-dimensional regulation of the photoelectric properties of infrared detectors and its mechanism research is the frontier of current infrared detector research, and it is also an important direction for the development of a new generation of infrared detectors in the future. Micro-nano structure infrared detection devices still face difficulties and challenges such as process compatibility, subversive performance, and self-adaptive ability to be improved. Micro-nano structure-enhanced infrared detection devices need to focus on the following research directions in the future development: (1) CMOS-compatible microstructure detection device structure design method and processing technology; (2) At the same time, it has broadband, high sensitivity, and low noise. Micro-nano structure infrared detection technology with comprehensive properties such as high response speed and high response speed; (3) Adaptive devices with dynamic control capabilities such as response spectrum. With the in-depth study of new materials, new structures, and new mechanisms of detectors in the future and the continuous progress of system integration technology, the micro-nano structure-enhanced infrared detectors will show great potential for application, providing high integration, high performance and Low-cost infrared detection systems offer new solutions.
The first author of this article is Zhu Peng, an assistant researcher at the Center for Micro-Nano Manufacturing and System Integration, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences. He is mainly engaged in the research of micro-nano optical devices, the preparation of two-dimensional materials, and the development of new infrared detection devices.
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