Guangmai Technology is professional in making the Dark Yellow color SMD LED 3030 2835 3V 6V.
Due to its adjustable wide band gap, InGaN film has broad application prospects in the visible light field. The use of micro-LED full-color display is one of the most potential applications. Future smart phones, watches, virtual reality glasses, etc. Small-size displays will benefit from micro-LED technology.
At present, micro-LED technology is facing two major challenges. The first is that it is very difficult to realize mass transfer technology, and the other is the lack of efficient and reliable red light micro-LED chips. The current red LED is made of AlGaInP material, and its efficiency is as high as 60% or more under the normal chip size. However, when the chip size is reduced to the order of micrometers, its efficiency will drastically drop below 1%. In addition, the poor mechanical properties of the AlGaInP material add new difficulties to the mass transfer, because the mass transfer requires the material to have good mechanical strength to avoid cracks during chip handling and placement.
InGaN material not only has better mechanical stability and shorter hole diffusion length, but is also compatible with InGaN-based green and blue micro-LEDs. It is a better choice for red micro-LEDs. However, the InGaN-based red light quantum well has a serious problem of indium segregation, which will lead to an increase in non-radiative recombination in the red light quantum well, thereby causing a decrease in efficiency. In the past 20 years of research, the power conversion efficiency of InGaN-based red LEDs was less than 2.5%. The problem of indium segregation has seriously hindered the development of InGaN-based red LEDs. Therefore, how to solve the problem of indium segregation is the key to obtaining high-efficiency InGaN-based red LEDs.
Recently, the research team of Academician Jiang Fengyi of Nanchang University demonstrated their latest high-efficiency InGaN-based orange-red LED results in Photonics Research, Volume 8, Issue 11, 2020.
(a) Schematic diagram of high luminous efficiency orange LED epitaxial material structure (b) TEM test results of its cross-section
This work is based on the silicon substrate gallium nitride technology, introduced the indium gallium nitride red light quantum well and the yellow light quantum well alternate growth method, combined with the V-shaped pit technology, thereby greatly alleviating the high In composition segregation problem in the red light quantum well. Based on the V-shaped p-n junction and quantum well band gap engineering, the radiation recombination rate in the red light quantum well is greatly increased.
Successfully prepared a series of high-efficiency InGaN-based orange-red LEDs using this technology. When the emission wavelengths are 594, 608, and 621 nm, the power conversion efficiencies are 30.1%, 24.0%, and 16.8%, respectively. Compared with the previously reported results of the same waveband InGaN-based LED, the light efficiency is about ten times higher.
Researchers believe that this technology has more room for improvement in the future. At the same time, the team’s experimental results also prove that InGaN materials will have great potential and bright prospects in the production of red light pixel chips for display applications.
GMKJ provides a lot of different color 3030 smd leds here:
Dark Yellow color SMD LED 3030 2835 3V 6V package size:
Dark Yellow color SMD LED 3030 2835 3V 6V application
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