According to foreign media reports, a research team led by Professor Zhou Shengjun of Wuhan University developed a high-efficiency GaN-based green LED on a sapphire substrate. The research team proposes to use a hybrid nucleation layer (Hybrid Nucleation Layer) composed of sputtered AIN (Sputtered AlN) and mid-temperature GaN devices to improve the quantum efficiency of GaN-based green LEDs.
Currently, the development of high-efficiency III-nitride emitters in the full visible range is highly attractive, and the fusion of multiple color III-nitride emitters enables efficient and precise hybrid spectral management, resulting in high-resolution displays and various smart lighting applications, but the main obstacle at present is the poor efficiency of III-nitride emitters in the green to tan spectral region.
To this end, researchers at Wuhan University used a new hybrid nucleation layer to fabricate high-efficiency InGaN/GaN green LEDs on sapphire substrates. During the production process, the mixed nucleation layer and the GaN surface will generate a Stacking Fault Structure, which helps to achieve Misfit Stress Compensation.
Benefiting from the initial thermal mismatch stress relaxation, the Disloaction Density and Residual Stress in green LEDs are reduced. As a result, the research team improved the efficiency by about 16% during mass production.
The Wuhan University research team said that the application prospect of the hybrid nucleation layer is very promising for realizing high-efficiency III-nitride emitters in the green to yellow-brown region.
