A few days ago, Austrian Optoelectronics Technology (Hangzhou) Co., Ltd. released a 2-inch (Φ50.8 mm) high-quality aluminum nitride single crystal substrate, and started small-batch mass production.
UTI-AlN-050B series 2-inch high-quality AlN single crystal substrates, and other sizes of AlN single crystal substrates
It is reported that aluminum nitride (AlN) is a new generation of ultra-wide bandgap semiconductor high-end materials, with a large forbidden band width (up to 6.2 eV), high thermal conductivity, high breakdown field strength, high thermal stability, and good deep ultraviolet transparency. Excellent performance advantages such as overrate, but due to the high difficulty of AlN single crystal growth and harsh conditions, its preparation is much more difficult than SiC, GaN, etc.
Although small-sized AlN single crystals have been widely used in device development, the limited wafer size and output cannot meet the needs of large-scale production line manufacturing in related fields. This has always been the main constraint on the large-scale application of AlN single crystal substrates. One of the bottlenecks.
This time, the 2-inch aluminum nitride single crystal substrate is coming as scheduled. High-power deep ultraviolet LEDs, ultraviolet LEDs, ultraviolet detectors, ultraviolet warning and high-power, high-frequency, high-temperature electronic devices and other fields are expected to usher in high-power chips. The best substrate materials and solutions.
