Guangmai Technology is professional in making the 1W 3W Yellow 3535 SMD LED Chip 585nm 590nm 595nm.
Semiconductor yellow LED technology has made breakthrough progress
After 57 years of development, visible light LEDs have achieved full color, providing humans with colorful visual feasts and high-efficiency energy-saving lighting sources. However, for a long time, the development of colorful LED light efficiency (light power efficiency) is very unbalanced. Among them, the light efficiency of yellow LED is much lower than that of other colors. As a result, the yellow light with high light efficiency has to be obtained through wavelength conversion of phosphors. This "electric-optical-optical" conversion technology solution is currently the mainstream technology of LED lighting. However, phosphors have inherent deficiencies in the light-to-light conversion process, such as large heat loss, large heat and light decay, and slow response, which restrict the rapid development of LEDs in the direction of high-quality lighting and high-speed visible light communication.
Therefore, solving the "yellow light gap" has become an attractive goal in this field. What kind of substrate, material, device structure, chip structure, and equipment can be used to manufacture high-efficiency yellow LEDs? There is no answer at home and abroad for a long time.
In the two yellow light material systems, as the wavelength of AlGaInP changes from red light to yellow light, the band gap changes from direct to indirect, and the efficiency drops sharply. This is a physical bottleneck; while indium gallium nitride is a direct band gap, which is the largest The difficulty is to grow high-quality, high-indium content indium gallium nitrogen quantum well material, which is a technical bottleneck. The indium composition of the yellow LED quantum well is about 30%, which obviously exceeds the indium composition of the blue quantum well about 15%. There are many difficulties in the growth of indium gallium nitrogen with high indium content: low growth temperature causes ammonia cracking, less nitrogen vacancies, slow atom migration and rough surface, fuzzy and barrier interfaces with different thicknesses, uneven indium composition, and severe indium segregation phase Separation, InGaN/GaN strong polarization brings less overlap of carrier wave functions, and so on.
Recently, the Jiang Fengyi research group of Nanchang University published an article in Photonics Research: Efficient InGaN based Yellow Light-emitting Diodes, which demonstrated breakthrough progress in the design and manufacturing technology of yellow light band LED materials. Based on the original GaN/Si-based blue LED materials, device structure, and chip structure, they designed new material structures, new growth equipment and new processes. They transformed the three major mismatches (large thermal expansion coefficient mismatch, large band gap width mismatch, and large lattice constant mismatch) into three major advantages.
The research group invented a grid-based material growth method and technology. A regular grid is fabricated on the substrate to replace irregular cracks, which eliminates the GaN/Si stress accumulation effect and solves the problem of cracks caused by the material. The problem of not being able to manufacture light-emitting chips also has the advantage of growing high-performance indium gallium nitride materials with high indium content due to maintaining GaN under tensile stress.
Researchers have invented a silicon-based LED chip structure with high light extraction efficiency by adjusting the current direction, light-emitting position, and light-emitting path, which not only solves the problem of substrate light absorption and electrode blocking light, but also has the advantages of single-sided light emission and high beam quality. The developed new integrated transition layer not only solves the problem of high dislocation density, but also rationally uses dislocations to form a device structure with large V pits, improves the hole transport path and improves the LED efficiency.
On the basis of transforming the three major mismatches into three major advantages, they adjusted the reaction gas transport path and deposition mechanism, invented a dense coaxial sleeve structure reaction chamber, and developed a high indium component that is more conducive to the incorporation of indium. The indium gallium nitride material growth equipment increases the growth temperature of the material, reduces the memory effect, and makes the quantum well and barrier interface steep; driven by the current density of 20A/cm2 and 3 A/cm2, 565nm silicon-based yellow LED light The efficiency has been increased to 24.3% and 33.7%, corresponding to 149 lm/W and 192 lm/W, respectively, thus effectively alleviating the yellow gap and solving the problem of the lack of high-efficiency yellow light in LEDs in the world.
The material structure is a silicon substrate indium gallium nitride multiple quantum well structure with a three-dimensional P-N junction with large V pits, and the chip is a single-sided light-emitting, thin-film structure.
Yellow and amber/orange color smd led lighting effect
Electrical Specs:
Package Size:
Application
About Guangmai
Shenzhen Guangmai Technology Co., Ltd. is an electronic technology enterprise integrating R&D, production, sales and service. Since its establishment, the company has been adhering to the business philosophy of "integrity, focus and innovation", specializing in UV LED, deep ultraviolet LED, 265-405nm: 2835 violet, 3535 violet 1414 violet UV module, 6868 violet, 7070 violet, 5050 violet , 3838 purple light 1212 purple light, and COB integrated LED purple light, imitating lumen high-power LED purple light, research and development and production of special UV light sources. After unremitting efforts, UV LED ultraviolet light curing, pulsed ultraviolet light curing, UV LED inkjet printer, biomedicine, police detection and analysis light source, plant growth lamp, scientific research multi-band light source, ultraviolet sterilization, LED photon medical treatment, ultraviolet water treatment , Vegetable processing, air processing, etc. as the main product line. Our aim is: to survive by quality, to seek cooperation with integrity.
Datasheet:
For more details, please feel free to contact with Guangmai Tech directly.
You can download the datasheet of 1W 3W Yellow 3535 SMD LED Chip 585nm 590nm 595nm from the head of this page.
Hot Tags: 1w 3w yellow 3535 smd led chip 585nm 590nm 595nm, China, manufacturers, suppliers, factory, price, cheap, quotation, datasheet, specs, specification, 730nm led chip, UVC LED Chip SMD 265nm 10mW, amber led lights for cars, 3535 rgbw, led 450nm, nichia 365uv
